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Materials Frontier No.188

Title: HVPE of III-V semiconductors for photonic integration and photovoltaics
Speaker: Dr SUN Yanting, Royal Institute of Technology-KTH
Date/Time: 2017-6-14, 10:00am
Venue: Yiuching Lecture Hall, XU Zuyao Building
2003 Ph.D./Tek.D., Semiconductor Materials, Royal Institute of Technology-KTH, Sweden
1998 M.Sc. in Eng., Materials Physics, Linköping University, Sweden
1995 B.Eng., Materials Science and Engineering, SEU Southeast University, China
2016-Present Docent, Royal Institute of Technology-KTH, Sweden
2011-2016 Researcher, Royal Institute of Technology-KTH, Sweden
The III-V semiconductors including InP, GaAs, GaP and other GaxIn1-xAsyP1-y compounds are the key materials to realize multiple functionalities in optical communication and renewable energy. Various epitaxial technologies have been developed to fabricate functional structures of III-V semiconductors with high crystalline quality. Hydride vapor phase epitaxy (HVPE) of III-V semiconductors operating at equilibrium condition with unique properties such high growth rate up to 100m/hour and high selectivity with respect to SiO2, Si3N4, etc. is a promising technology for dissimilar semiconductor materials integration and nano-structured III-V semiconductor formation, which are desired for the applications of photonics and high efficiency photovoltaics. In this presentation, the recent development of monolithic integration of InP on Si implemented by epitaxial lateral overgrowth (ELOG) and the realization of 3D III-V semiconductors photonic crystals (PhCs) by the selective growth in colloidal templates in HVPE will be introduced. The demonstration of InP/Si heterojunction photodiode with photovoltaic effect and the single crystalline GaInP 3D PhCs with optical properties matching to the simulation will be presented.

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