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Name: Hong ZHU

Title: Associate Professor

Office: Room 414, UM-SJTU Joint institute

Tel: 021-34208054


Email: hong.zhu@sjtu.edu.cn


Platform: Research Base of Introduce Talents


Biographical Information

 2003-2007 Shanghai Jiaotong University, School of Materials Science and Engineering, B.S.
 2007-2012 University of Connecticut, Dept. of Materials Science and Engineering, Ph.D.
 2012-2015 Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Postdoctoral Associate
 2015-present Shanghai Jiao Tong University, UM-SJTU Institute, Assistant Professor

Research Interests

 Advanced energy and electronic materials design through atomistic modeling, high throughput computations and data mining.
 Physical property tailoring through band structure, defect and interface engineering.

Selected Publications

 Electrical, Optical and Magnetic Properties of Materials
 Mechanical Behavior of Materials

Research Projects

[1]  W. Chen, et al, Understanding thermoelectric properties from high-throughput calculations: trends, insights, and comparisons with experiment, J. Mater. Chem. C 4, 4414 (2016).
[2]  U. Aydemir et al, YCuTe2: a member of a new class of thermoelectric materials with CuTe4-based layered structure, J. Mater. Chem.A 4, 2461 (2016).
[3]  H. Zhu et al, Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first principles high-throughput screening, J. Mater. Chem. C 3, 10554 (2015).
[4]  H. Zhu et al, Band structure engineering through orbital interaction for enhanced thermoelectric power factor, Appl. Phys. Lett. 104, 082107 (2014).
[5]  R. Ramprasad, et al, New perspective on formation energies and energy levels of point defects in non-metals, Phys. Rev. Lett. 108, 066404 (2012).
[6]  R. J. Mehata et al, Seebeck and figure of merit enhancement in nanostructured antimony telluride by antisite defect suppression through sulfur doping, Nano. Lett. 12, 4523 (2012).
[7]  H. Zhu, et al, Recent progress in ab initio simulations of hafnia-based gate stacks, J. Mater. Sci. 47, 7399 (2012).
[8]  Y. Zhong, et al, The equilibrium morphology of WC particles-a combined ab initio and experimental study, Acta Mater. 59, 3748 (2011).
[9]  H. Zhu, M. Aindow and R. Ramprasad, Stability and work function of TiCxN1-x alloy surfaces: Density functional theory calculations, Phys. Rev. B 80, 201406 (R) (2009).


Honors & Awards

800 Dongchuan Road, Minhang District, Shanghai, China Tel: +86-21-3420-3098