Hydride vapor phase epitaxy of III-V semiconductors for photonic devices
Researcher Yanting Sun, Royal Institute of Technology-KTH, Sweden
Friday 10th November
16:00-17:00
Meeting room 308, Xu Zuyao Building
Biography
Yanting Sun received his M. Sc from Linköping University in 1998 and Ph.D. from KTH-Royal Institute of Technology in 2003. From 2004 to 2011, he conducted research and development on the processing technology of high power semiconductor lasers, wavelength tunable diode lasers and avalanche photodiodes in industry. He joined KTH-Royal Institute of Technology in 2011 as Researcher. His research interests include hydride vapor phase epitaxy (HVPE) technology for the growth of III-V compound semiconductor materials and photonic devices for the applications of optical communication and renewable energy.
Abstract
Hydride vapor phase epitaxy (HVPE) is a near equilibrium semiconductor crystal growth technology, which has high growth rate and high selectivity. In this presentation, the recent progress of exploiting III-V semiconductor HVPE in high power quantum cascade laser (QCL), III-V/Si integration for photonic integrated circuit and renewable energy, and III-V semiconductor nonlinear optical crystal is introduced.